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NTE299 +BOM

RF Transistor NPN 35V 1A 4W Through Hole TO-202

NTE299 General Description

RF Transistor NPN 35V 1A 4W Through Hole TO-202

Specifications

Series - Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 35V Frequency - Transition -
Noise Figure (dB Typ @ f) - Gain -
Power - Max 4W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA, 10V
Current - Collector (Ic) (Max) 1A Operating Temperature 125°C (TJ)
Mounting Type Through Hole

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