Payment Method
NTE299 +BOM
RF Transistor NPN 35V 1A 4W Through Hole TO-202
TO-202LongTab-
Manufacturer:
-
Mfr.Part #:
NTE299
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Datasheet:
-
Transistor Type:
NPN
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Voltage - Collector Emitter Breakdown (Max):
35V
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Power - Max:
4W
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DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 100mA, 10V
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EDA/CAD Models:
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NTE299 General Description
RF Transistor NPN 35V 1A 4W Through Hole TO-202
Specifications
Series | - | Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 35V | Frequency - Transition | - |
Noise Figure (dB Typ @ f) | - | Gain | - |
Power - Max | 4W | DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 100mA, 10V |
Current - Collector (Ic) (Max) | 1A | Operating Temperature | 125°C (TJ) |
Mounting Type | Through Hole |
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In Stock: 5,413
Minimum Order: 1
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