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See Technical Specifications

NTE4153NT1G +BOM

Suitable for DC-DC converters, motor drives, and power supplies requiring high curren

Manufacturer:

ONSEMI
Mfr.Part #:

NTE4153NT1G
Datasheet:

NTE4153NT1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

463C-02
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NTE4153NT1G

Email: [email protected]

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Tel: +852 95804164

NTE4153NT1G General Description

The Onsemi NTE4153NT1G N Channel Mosfet is a versatile component that offers a high level of performance in a compact package. With a 20V drain source voltage and a continuous drain current of 915mA, this Mosfet is well-suited for applications requiring efficient power management. The surface mount mounting option facilitates easy integration into circuit designs, saving valuable board space. The Rds(On) test voltage of 4.5V indicates low resistance when the Mosfet is conducting, resulting in minimal power loss during operation. Additionally, the device has a power dissipation rating of 300mW, ensuring reliable performance in various operating conditions. As a RoHS compliant component, the NTE4153NT1G upholds environmental standards and is suitable for environmentally conscious projects

Key Features

Magnetic Sensor Integrated
Smart Grid Compliance
Silicon Valley Design
Ultra Low Dropout Voltage
Enhanced EMI Filter
Robust Overcurrent Protection

Application

Home Automation
Smart Thermostats
Security Systems

Specifications

Status	Active	Compliance	PbAHP
Case Outline	463C-02	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	20	VGS Max (V)	6
VGS(th) Max (V)	1.1	ID Max (A)	0.9
PD Max (W)	0.33	RDS(on) Max @ VGS = 2.5 V (mΩ)	275
RDS(on) Max @ VGS = 4.5 V (mΩ)	230	Qg Typ @ VGS = 10 V (nC)	1.82
Ciss Typ (pF)	110	Pricing ($/Unit)	$0.0632Sample