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Dual N & P-Channel 30/20V 1.5mOhm 270 mW Small Signal MOSFET SOT-363
SC-88Manufacturer:
Mfr.Part #:
NTJD4158CT1G
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
6
Reach Compliance Code:
compliant
EDA/CAD Models:
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The NTJD4158CT1G is a MOSFET transistor designed for use in various electronic applications where N and P channel complementarity is required. With a continuous drain current of 250mA and a drain-source voltage of 30V, this transistor offers reliable and efficient performance. The on-resistance of 1ohm ensures minimal power loss and high efficiency in circuit operation. The threshold voltage of 1.2V and test voltage of 4.5V make this transistor easy to control and operate. With a power dissipation of 270mW, the NTJD4158CT1G can handle moderate power levels without overheating
Source Content uid | NTJD4158CT1G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 6 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Factory Lead Time | 51 Weeks |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 0.25 A | Drain-source On Resistance-Max | 2.5 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 12 pF |
JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 0.27 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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