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NTMFS5C430NLT1G +BOM

Power Field-Effect Transistor, 200A I(D), 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer:

onsemi
Mfr.Part #:

NTMFS5C430NLT1G
Datasheet:

NTMFS5C430NLT1G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NTMFS5C430NLT1G General Description

Product NTMFS5C430NLT1G is a MOSFET designed for high power applications, specifically N-channel with a continuous drain current of 200A and a drain-source voltage rating of 40V. With an on-resistance of 0.0012ohm and a threshold voltage of 2V, this MOSFET is suitable for high efficiency power management systems

Key Features

High voltage withstand capability
Low noise operation
Robust against Power Supply Noise

Application

Surge Protector Devices
Electric Vehicle Chargers
Uninterruptible Power Supplies

Specifications

Source Content uid	NTMFS5C430NLT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	67 Weeks
Date Of Intro	2016-02-26	Avalanche Energy Rating (Eas)	493 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V	Drain Current-Max (ID)	200 A
Drain-source On Resistance-Max	0.0022 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	144 pF	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	110 W
Pulsed Drain Current-Max (IDM)	900 A	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	86 ns
Turn-on Time-Max (ton)	301 ns