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See Technical Specifications

PBSS304NZ +BOM

Bipolar Transistors - BJT

Manufacturer:

NXP
Mfr.Part #:

PBSS304NZ
Datasheet:

PBSS304NZ Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

4
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for PBSS304NZ

PBSS304NZ General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PZ.

Key Features

Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified

Application

High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications

Specifications

Source Content uid	PBSS304NZ	Part Life Cycle Code	Transferred
Pin Count	4	Reach Compliance Code	compliant
ECCN Code	EAR99	Case Connection	COLLECTOR
Collector Current-Max (IC)	5.2 A	Collector-Emitter Voltage-Max	60 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	80
JESD-30 Code	R-PDSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	NPN
Power Dissipation-Max (Abs)	2 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin (Sn)
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	130 MHz
Turn-off Time-Max (toff)	555 ns	Turn-on Time-Max (ton)	110 ns