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PBSS4140T +BOM

Bipolar Transistors - BJT

PBSS4140T General Description

NPN low V transistor in a SOT23 plastic package. PNP complement: PBSS5140T.

Key Features

  • Low collector-emitter saturation voltage
  • High current capabilities.
  • Improved device reliability due to reduced heat generation.
  • AEC-Q101 qualified

Application

  • General purpose switching and muting
  • LCD backlighting
  • Supply line switching circuits
  • Battery driven equipment (mobile phones, video cameras and hand-held devices).

Specifications

Part Life Cycle Code Transferred Reach Compliance Code
ECCN Code EAR99 Collector Current-Max (IC) 1 A
Configuration SINGLE DC Current Gain-Min (hFE) 300
Number of Elements 1 Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.3 W Surface Mount NO
Transition Frequency-Nom (fT) 150 MHz

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