This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

PBSS4160DPN +BOM

Bipolar transistor for low power applications

Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Specifications

Source Content uid PBSS4160DPN Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Date Of Intro 2017-02-01 Application SWITCHING
Configuration SEPARATE, 2 ELEMENTS DC Current Gain-Min (hFE) 250
JESD-30 Code R-PDSO-G6 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 6
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN AND PNP
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Element Material SILICON

Service Policies and Others

After-Sales & Settlement Related

payment Payment

Payment Method

hsbc
TT/Wire Transfer
paypal
Paypal
wu
Western Union
mg
Money Gram

For alternative payment channels, please reach out to us at:

[email protected]
shipping Shipping & Packing

Shipping Method

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

Reviews

You need to log in to reply. Sign In | Sign Up