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PBSS4160DPN,115 +BOM

NPN/PNP low V Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

PBSS4160DPN,115 General Description

NPN/PNP low V Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

Key Features

  • Robust operation under various load conditions
  • Good temperature compensation
  • High speed and high accuracy with low noise
  • Compact size and light weight

Application

  • Fun in the sun
  • Beach days ahead
  • Sand between toes

Specifications

Transistor Type NPN, PNP Current - Collector (Ic) (Max) 870mA, 770mA
Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V / 150 @ 500mA, 5V
Power - Max 420mW Frequency - Transition 220MHz, 185MHz
Operating Temperature 150°C (TJ) Grade Automotive
Qualification AEC-Q100 Mounting Type Surface Mount
Base Product Number PBSS4160

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