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PBSS4350SS,115 +BOM

Dual NPN bipolar junction transistor

  • Manufacturer:

    Nexperia USA Inc.

  • Mfr.Part #:

    PBSS4350SS,115

  • Datasheet:

    PBSS4350SS,115 Datasheet (PDF) pdf-icon

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    2.7A

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    340mV @ 270mA, 2.7A

PBSS4350SS,115 General Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 2.7A 2W Surface Mount 8-SO

Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Specifications

Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 2.7A
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 340mV @ 270mA, 2.7A
Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A, 2V
Power - Max 2W Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Base Product Number PBSS4350SS

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