This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SPB70N10L +BOM

Transistor MOSFET with N-type channel, 100V voltage rating, and 70A current handling capability

Manufacturer:

INFINEON TECHNOLOGIES AG
Mfr.Part #:

SPB70N10L
Datasheet:

SPB70N10L Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

4
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
EDA/CAD Models:

Request Free CAD Models for SPB70N10L

SPB70N10L General Description

This N-channel silicon transistor is constructed using metal-oxide semiconductor technology, providing excellent switching performance and reliability. The TO-263AB package offers a compact and rugged housing, while the plastic material ensures durability and resistance to environmental factors. The 3-pin design allows for easy installation and connectivity, making it suitable for a wide range of applications

Specifications

Source Content uid	SPB70N10L	Part Life Cycle Code	Obsolete
Pin Count	4	Reach Compliance Code
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)	700 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	70 A
Drain-source On Resistance-Max	0.025 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	250 W	Pulsed Drain Current-Max (IDM)	280 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON