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See Technical Specifications

TIP112G +BOM

Medium Power NPN Darlington Bipolar Power Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

TIP112G
Datasheet:

TIP112G Datasheet (PDF)
Transistor Type:

NPN - Darlington
Current - Collector (Ic) (Max):

2 A
Voltage - Collector Emitter Breakdown (Max):

100 V
Vce Saturation (Max) @ Ib, Ic:

2.5V @ 8mA, 2A
EDA/CAD Models:

Request Free CAD Models for TIP112G

TIP112G General Description

Look no further for a transistor that can meet your requirements for general purpose amplifier and low speed switching applications. The TIP112G Darlington Bipolar Power Transistor is designed to deliver the performance and versatility you need, making it a reliable choice for a variety of circuit designs. With complementary devices like the TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP), you have the flexibility to create the ideal solution for your specific needs

Key Features

Economical Design, Cost-Effective Solution
Durable Materials, Long-Term Reliability
Safe and Secure, Overcurrent Protection
Low Power Consumption, Energy Efficiency

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN - Darlington	Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V	Vce Saturation (Max) @ Ib, Ic	2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)	2mA	DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1A, 4V
Power - Max	2 W	Frequency - Transition	-
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	TIP112