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See Technical Specifications

TIP122G +BOM

5.0 A, 100 V NPN Darlington Bipolar Power Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

TIP122G
Datasheet:

TIP122G Datasheet (PDF)
Case Outline:

221A-09
MSL Temp (°C):

0
Container Type:

TUBE
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for TIP122G

TIP122G General Description

Whether you're looking to amplify signals or control low-speed switching operations, the TIP122G Darlington Bipolar Power Transistor offers a reliable solution. Its complementary pairing with other devices further enhances its versatility and applicability in diverse electronic circuits

Key Features

High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage @ 100 mA
V_CEO(sus) = 60 Vdc (Min) TIP120, TIP125
V_CEO(sus) = 80 Vdc (Min) TIP121, TIP126
V_CEO(sus) = 100 Vdc (Min) TIP122, TIP127
Low Collector-Emitter Saturation Voltage
V_CE(sat) = 2.0 Vdc (Max) @ I_C= 3.0 Adc
= 4.0 Vdc (Max) @ I_C= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Pb-Free Packages are Available

Specifications

Status	Active	Case Outline	221A-09
MSL Temp (°C)	0	Container Type	TUBE
Product Category	Darlington Transistors	Configuration	Single
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	100 V
Emitter- Base Voltage VEBO	5 V	Collector- Base Voltage VCBO	100 V
Maximum DC Collector Current	5 A	Maximum Collector Cut-off Current	200 uA
Pd - Power Dissipation	65 W	Mounting Style	Through Hole
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Series	TIP122	Continuous Collector Current	5 A
DC Collector/Base Gain hfe Min	1000	Height	15.75 mm
Length	10.53 mm	Product Type	Darlington Transistors
Factory Pack Quantity	50	Subcategory	Transistors
Width	4.83 mm	Unit Weight	0.081130 oz