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UF3C065030K3S +BOM

High-current 650V Silicon Carbide Power Field-Effect Transistor with low resistance of 0.035ohm

UF3C065030K3S General Description

Unveiling the UF3C065030K3S, a state-of-the-art silicon carbide (SiC) power module engineered for high-performance power electronic applications. With a current rating of 65A and a voltage rating of 1200V, this compact and lightweight module, featuring a three-phase bridge topology, is ideally suited for a wide array of power conversion systems, including renewable energy inverters, electric vehicles, and industrial motor drives. Incorporating advanced SiC MOSFET and Schottky diode technology, the module delivers high efficiency, low switching losses, and improved thermal performance compared to traditional silicon-based power modules, making it the perfect choice for high-frequency switching applications and high-temperature environments. Furthermore, the UF3C065030K3S includes an integrated gate driver, simplifying system design and reducing overall system size and cost. Additionally, it comes with built-in protection features, such as over-current and over-temperature protection, ensuring safe and reliable operation

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Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 85 A Rds On - Drain-Source Resistance 35 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 51 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 441 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename SiC FET Series UF3C
Configuration Single Product Type MOSFET
Factory Pack Quantity 30 Subcategory MOSFETs
Unit Weight 0.211644 oz

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