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High-current 650V Silicon Carbide Power Field-Effect Transistor with low resistance of 0.035ohm
TO-247-3Manufacturer:
Mfr.Part #:
UF3C065030K3S
Datasheet:
Technology:
SiC
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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Unveiling the UF3C065030K3S, a state-of-the-art silicon carbide (SiC) power module engineered for high-performance power electronic applications. With a current rating of 65A and a voltage rating of 1200V, this compact and lightweight module, featuring a three-phase bridge topology, is ideally suited for a wide array of power conversion systems, including renewable energy inverters, electric vehicles, and industrial motor drives. Incorporating advanced SiC MOSFET and Schottky diode technology, the module delivers high efficiency, low switching losses, and improved thermal performance compared to traditional silicon-based power modules, making it the perfect choice for high-frequency switching applications and high-temperature environments. Furthermore, the UF3C065030K3S includes an integrated gate driver, simplifying system design and reducing overall system size and cost. Additionally, it comes with built-in protection features, such as over-current and over-temperature protection, ensuring safe and reliable operation
Product Category | MOSFET | Technology | SiC |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 85 A | Rds On - Drain-Source Resistance | 35 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 51 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 441 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | SiC FET | Series | UF3C |
Configuration | Single | Product Type | MOSFET |
Factory Pack Quantity | 30 | Subcategory | MOSFETs |
Unit Weight | 0.211644 oz |
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