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See Technical Specifications

ZVN0545A +BOM

ENHANCEMENT Vertical DMOS FET N-CHANNEL MODE

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN0545A
Datasheet:

ZVN0545A Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel

ZVN0545A General Description

Featuring a compact E-Line case style with 3 pins, the ZVN0545A MOSFET is easy to integrate into circuit designs. Its maximum power dissipation of 700mW ensures optimal thermal performance, even under heavy loads. With a pulse current rating of 600mA and a maximum total power dissipation of 800mW, this MOSFET can handle transient spikes and power surges effectively

Key Features

* 450 Volts VDS

* RDS(on)= 50

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	450 V
Id - Continuous Drain Current	90 mA	Rds On - Drain-Source Resistance	50 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	700 mW
Channel Mode	Enhancement	Series	ZVN0545
Configuration	Single	Fall Time	10 ns
Forward Transconductance - Min	100 mS	Height	4.01 mm
Length	4.77 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	7 ns
Factory Pack Quantity	4000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	FET
Typical Turn-Off Delay Time	16 ns	Typical Turn-On Delay Time	7 ns
Width	2.41 mm	Unit Weight	0.016000 oz