This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ZVN2110A +BOM

Vertical DMOS FET Operating in N-Channel Enhancement Mode

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN2110A
Datasheet:

ZVN2110A Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel

ZVN2110A General Description

With a single element design, the ZVN2110A offers reliable performance in a compact package. Its N-channel configuration allows for efficient switching and amplification of signals in various applications. The silicon material used in its construction ensures durability and stability under different operating conditions

Key Features

100 Volt VDS
RDS(on)= 4Ω

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	320 mA	Rds On - Drain-Source Resistance	4 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	700 mW
Channel Mode	Enhancement	Series	ZVN2110
Configuration	Single	Fall Time	13 ns
Forward Transconductance - Min	250 mS	Height	4.01 mm
Length	4.77 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	8 ns
Factory Pack Quantity	4000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	FET
Typical Turn-Off Delay Time	13 ns	Typical Turn-On Delay Time	7 ns
Width	2.41 mm	Unit Weight	0.016000 oz