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See Technical Specifications

ZVN4306A +BOM

Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN4306A
Datasheet:

ZVN4306A Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel

ZVN4306A General Description

Product ZVN4306A is a high-performance MOSFET transistor suitable for N-channel logic applications. With a continuous drain current of 1.1A and a drain-source voltage rating of 60V, this transistor offers reliable performance in various circuit designs. The on-resistance (Rds(on)) is measured at 450mOhm with a test voltage (Vgs) of 10V, ensuring efficient power management. The threshold voltage (Vgs Typ) is specified at 3V, making it compatible with a wide range of control signals

Key Features

60 Volt VDS
RDS(on)= 0.33Ω
Spice model available

Application

SWITCHING

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	1.1 A
Rds On - Drain-Source Resistance	450 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.3 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	850 mW	Channel Mode	Enhancement
Series	ZVN4306	Configuration	Single
Fall Time	16 ns	Forward Transconductance - Min	700 mS
Height	4.01 mm	Length	4.77 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	25 ns	Factory Pack Quantity	4000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	FET	Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	8 ns	Width	2.41 mm
Unit Weight	0.016000 oz