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C2M0025120D +BOM

TO-247 Power MOSFET, N-Channel, Silicon Carbide (SiC) Technology, Rated for 1.2KV and 63A

Manufacturer:

Wolfspeed, Inc.
Mfr.Part #:

C2M0025120D
Datasheet:

C2M0025120D Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

compliant
Case Connection:

DRAIN
EDA/CAD Models:

Request Free CAD Models for C2M0025120D

C2M0025120D General Description

The C2M0025120D is a state-of-the-art silicon carbide power MOSFET module that stands out in the market due to its impressive specifications. With a maximum voltage rating of 1200V and a continuous current rating of 250A, this module is well-equipped to handle the demands of high power applications, such as power conversion and motor drive. Its low on-resistance and high switching speed contribute to its exceptional efficiency and reduced switching losses, making it an ideal choice for a wide range of applications

Key Features

Drain to source voltage (Vds) of 1.2kV
Continuous drain current of 90A
Power dissipation of 463W
Operating junction temperature of -55°C to 150°C
Low on state resistance of 25mohm at Vgs of 20V

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Not Recommended
Reach Compliance Code	compliant	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	1200 V
Drain Current-Max (ID)	90 A	Drain-source On Resistance-Max	0.034 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	250 A	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON CARBIDE