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C2M0045170P +BOM

TO-247 package containing N-channel silicon carbide transistor with 1.7KV voltage rating and 72A current rating

Manufacturer:

Wolfspeed, Inc.
Mfr.Part #:

C2M0045170P
Datasheet:

C2M0045170P Datasheet (PDF)
Series:

C2M™
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

1700 V
EDA/CAD Models:

Request Free CAD Models for C2M0045170P

C2M0045170P General Description

Engineered for high power density applications, the C2M0045170P module is designed to meet the demands of space-constrained environments where weight and size are critical factors. Its high-speed switching capability allows for the use of smaller and lighter passive components, ultimately leading to reduced costs and improved system performance. Additionally, the module's wide operating temperature range and high reliability make it an ideal solution for harsh environments and rigorous applications, ensuring consistent and dependable performance in challenging conditions

Specifications

Series	C2M™	FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	72A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	59mOhm @ 50A, 20V	Vgs(th) (Max) @ Id	4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs	188 nC @ 20 V	Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3672 pF @ 1000 V	Power Dissipation (Max)	520W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	C2M0045170