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MOSFET featuring 1700V rating and 1 Ohm RDS ON using silicon carbide technology
TO-263-8,D2PAK(7Leads+Tab),TO-263CAManufacturer:
Wolfspeed, Inc.
Mfr.Part #:
C2M1000170J-TR
Datasheet:
Series:
C2M™
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):
1700 V
EDA/CAD Models:
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Meet the C2M1000170J-TR silicon carbide power MOSFET, a cutting-edge creation by Wolfspeed, a Cree Company, designed to revolutionize high-efficiency power conversion applications. Whether it's motor drives, UPS systems, or renewable energy inverters, this MOSFET is the pinnacle of excellence. With a voltage rating of 1700V and a continuous current rating of 100A, it is perfectly poised to meet the demands of high-power applications. Its low on-resistance of 0.070 ohms is a game-changer in minimizing power losses and enhancing the overall system efficiency. Encased in a TO-247-4 package, it delivers exceptional thermal performance and facilitates easy mounting onto a heatsink for efficient heat dissipation. Not to mention, the C2M1000170J-TR showcases a fast switching speed and high avalanche ruggedness, cementing its reputation for unwavering reliability and robustness in various operating conditions
Series | C2M™ | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 20V | Vgs(th) (Max) @ Id | 4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 20 V | Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 1000 V | Power Dissipation (Max) | 78W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | C2M1000170 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $6.094 | $6.09 |
10+ | $5.351 | $53.51 |
30+ | $4.898 | $146.94 |
100+ | $4.517 | $451.70 |
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