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See Technical Specifications

C2M0080120D +BOM

Power Mosfet, N Channel, 31.6 A, 1.2 Kv, 0.08 Ohm, 20 V, 3.2 V Rohs Compliant: Yes

Manufacturer:

Wolfspeed, Inc.
Mfr.Part #:

C2M0080120D
Datasheet:

C2M0080120D Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

compliant
Case Connection:

DRAIN
EDA/CAD Models:

Request Free CAD Models for C2M0080120D

C2M0080120D General Description

The C2M0080120D MOSFET is a reliable and efficient semiconductor component with a high drain source voltage of 1200V and a continuous drain current of 31.6A. Its low on-resistance of 0.08ohm ensures minimal power loss and high efficiency. With a threshold voltage of 3.2V and a power dissipation of 208W, this N-channel transistor is designed for high performance in challenging environments. The TO-247 case style with 3 pins allows for easy and secure mounting, while its wide operating temperature range of -55°C to 150°C ensures versatility in various applications

Key Features

High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefts
Higher System Effciency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Not Recommended
Reach Compliance Code	compliant	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	1200 V
Drain Current-Max (ID)	36 A	Drain-source On Resistance-Max	0.098 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	80 A	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON CARBIDE