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E3M0040120K +BOM

Automotive-grade N-channel silicon carbide (SiC) MOSFET capable of handling up to 1

E3M0040120K General Description

N-Channel 1200 V 57A (Tc) 242W Through Hole TO-247-4L

Specifications

Series E FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 53mOhm @ 31.9A, 15V Vgs(th) (Max) @ Id 3.6V @ 8.77mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 15 V Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 2726 pF @ 1000 V Power Dissipation (Max) 242W
Operating Temperature -55°C ~ 175°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Through Hole

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