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E3M0280090D +BOM

MOSFET suitable for automotive use, made of Silicon Carbide with 280 milliohms resistance and 900V rating, meeting AECQ101 standards

E3M0280090D General Description

N-Channel 900 V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3

Specifications

Series E-Series FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 15 V Vgs (Max) +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 600 V Power Dissipation (Max) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Grade Automotive
Mounting Type Through Hole Base Product Number E3M0280090

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