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E3M0075120K +BOM

1.2kV 32A MOSFET with 145W power rating

E3M0075120K General Description

N-Channel 1200 V 32A (Tc) 145W (Tc) Through Hole TO-247-4L

Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1.2 kV
Id - Continuous Drain Current 32 A Rds On - Drain-Source Resistance 97.5 mOhms
Vgs - Gate-Source Voltage - 8 V, + 19 V Vgs th - Gate-Source Threshold Voltage 3.6 V
Qg - Gate Charge 55 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 145 W
Channel Mode Enhancement Qualification AEC-Q101
Series E-Series Configuration Single
Fall Time 11 ns Forward Transconductance - Min 11 S
Product Type MOSFET Rise Time 22 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type Automotive Power MOSFET Typical Turn-Off Delay Time 29 ns
Typical Turn-On Delay Time 8 ns

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