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E3M0075120D +BOM

E3M0075120D MOSFET

E3M0075120D General Description

N-Channel 1200 V 32A (Tc) 145W (Tc) Through Hole TO-247-3

Specifications

Series E-Series FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 97.5mOhm @ 17.9A, 15V Vgs(th) (Max) @ Id 3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 15 V Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 1000 V Power Dissipation (Max) 145W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Grade Automotive
Mounting Type Through Hole

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