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IKQ40N120CH3 +BOM

High-power IGBT chip designed for efficient power switching in industrial and automotive applications

IKQ40N120CH3 General Description

IKQ40N120CH3 is a high power insulated gate bipolar transistor (IGBT) manufactured by Infineon Technologies. Here are some features of this component:

Infineon Technologies Corporation Inventory

Key Features

  • Collector-Emitter Voltage (VCE): 1200V
  • Collector Current (IC): 80A
  • Maximum Power Dissipation: 640W
  • Fast Switching Speed
  • Low Saturation Voltage
Infineon Technologies Corporation Original Stock

Application

  • Power supplies and converters
  • Motor control
  • Industrial automation
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Welding equipment

Specifications

IC max 80.0 A ICpuls max 160.0 A
IF max 40.0 A IFpuls max 160.0 A
Ptot max 500.0 W Switching Frequency max 60.0 kHz
Switching Frequency min 18.0 kHz Switching Frequency 18-60 kHz
VCE max 1200.0 V Technology IGBT HighSpeed 3

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Ratings and Reviews

More
J
J**s 06/10/2022

Took a short time, since last year, took only 2 days ago

11
J
J**s 04/24/2022

Works what else you need

10
J
J**e 01/28/2021

great item, as described, very fast shipping.

13
N
N**s 10/10/2020

For this price an excellent scarf for small applications

8

Reviews

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