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IKW50N65F5 +BOM

N-CH 650V 80A 305W

IKW50N65F5 General Description

Housed in a robust TO-247 package, the IKW50N65F5 offers excellent thermal conductivity and mechanical stability, ensuring optimal performance and reliability. With a wide operating temperature range of -55°C to 150°C, this IGBT is versatile and adaptable to various environmental conditions

Infineon Technologies Corporation Inventory

Key Features

  • 650 V breakthrough voltage
  • Compared to best-in-class HighSpeed 3 family
  • Factor 2.5 lower Q
  • g
  • Factor 2 reduction in switching losses
  • 200mV reduction in V
  • CEsat
  • Co-packed with Rapid Si-diode technology
  • Low C
  • OES
  • OSS
  • Mild positive temperature coefficient V
  • CEsat
  • Temperature stability of V
  • f
  • Best-in-class efficiency, resulting in lower junction and 
  • case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising 
  • reliability
  • Higher power density design
Infineon Technologies Corporation Original Stock

Specifications

IC max 80.0 A ICpuls max 150.0 A
IF max 40.0 A IFpuls max 150.0 A
VCE max 650.0 V Switching Frequency TRENCHSTOP™5 60-120 kHz
Technology IGBT TRENCHSTOP™ 5 Switching Frequency max 120.0 kHz
Switching Frequency min 60.0 kHz Ptot max 305.0 W

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Ratings and Reviews

More
G
G**n 02/05/2024

Everything is ok. It was a month to reg 34. Volgograd.

19
M
M**h 02/05/2023

It came in 50 days. Checked, everything works

18
I
I**c 03/25/2022

Package arrived, packed well

5

Reviews

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IKW50N65F5 Datasheet PDF

Preliminary Specification IKW50N65F5 PDF Download

IKW50N65F5 PDF Preview