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IMT4T108 +BOM

300mW 180@2mA Bipolar Transistors - BJT ROHS

IMT4T108 General Description

Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Rohm Semiconductor Inventory

Key Features

  • 1) Two 2SA1514K chips in an AMT package.
  • 2) High breakdown voltage.

Specifications

Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA, 6V
Power - Max 300mW Frequency - Transition 140MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number MT4

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