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IMBG120R060M1HXTMA1 +BOM

MOSFET SIC DISCRETE

IMBG120R060M1HXTMA1 General Description

N-Channel 1200 V 36A (Tc) 181W (Tc) Surface Mount PG-TO263-7-12

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Key Features

  • Very low switching losses
  • Short-circuit withstand time, 3 μs
  • Fully controllable dV/dt
  • Benchmark gate threshold voltage,>
  • Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • Package creepage and clearance distances, > 6.1 mm
  • Sense pin for optimized switching performance
  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost
  • SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
Infineon Technologies Corporation Original Stock

Application

  • Fast EV charging
  • Industrial motor drivesand controls
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series CoolSiC™
FET Type N-Channel Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Rds On (Max) @ Id, Vgs 83mOhm @ 13A, 18V Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 18 V Vgs (Max) +18V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1145 pF @ 800 V FET Feature Standard
Power Dissipation (Max) 181W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Base Product Number IMBG120
RHoS yes PBFree yes
HalogenFree yes

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IMBG120R060M1HXTMA1 Datasheet PDF

Preliminary Specification IMBG120R060M1HXTMA1 PDF Download

IMBG120R060M1HXTMA1 PDF Preview

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