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IMBG120R030M1HXTMA1 +BOM
N-channel 56A high voltage power transistor
TO263-7-12-
Manufacturer:
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Mfr.Part #:
IMBG120R030M1HXTMA1
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Datasheet:
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RHoS:
yes
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PBFree:
yes
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HalogenFree:
yes
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EDA/CAD Models:
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IMBG120R030M1HXTMA1 General Description
The IMBG120R030M1HXTMA1 is a state-of-the-art Mosfet module offering exceptional power handling and efficiency. With an N Channel configuration, 56A continuous drain current, and 1.2Kv drain source voltage, it is well-equipped to meet the demands of high-performance applications. Its 7 pins configuration and Rohs compliance make it easy to integrate into diverse systems while aligning with environmental regulations. The 300W power dissipation ensures reliable and consistent operation, making this module a dependable choice for various industrial and commercial needs
Key Features
- Very low switching losses
- Short-circuit withstand time, 3 μs
- Fully controllable dV/dt
- Benchmark gate threshold voltage,>
- Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- Package creepage and clearance distances, > 6.1 mm
- Sense pin for optimized switching performance
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system complexity and cost
- SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
Application
- Fast EV charging
- Industrial motor drivesand controls
- Solutions for photovoltaic energy systems
- Uninterruptible Power Supplies (UPS)
Specifications
RHoS | yes | PBFree | yes |
HalogenFree | yes |
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IMBG120R030M1HXTMA1 Datasheet PDF
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In Stock: 6,589
Minimum Order: 1
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The prices below are for reference only.
well made cant wait to try them out.