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See Technical Specifications

IMX25T110 +BOM

General purpose bipolar junction transistor

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

IMX25T110
Datasheet:

IMX25T110 Datasheet (PDF)
Transistor Type:

2 NPN (Dual)
Current - Collector (Ic) (Max):

300mA
Voltage - Collector Emitter Breakdown (Max):

20V
Vce Saturation (Max) @ Ib, Ic:

100mV @ 3mA, 30mA
EDA/CAD Models:

Request Free CAD Models for IMX25T110

IMX25T110 General Description

With the IMX25T110, users can enjoy the benefits of having two transistors in a single package, allowing for streamlined circuit designs and improved performance. Whether you're working on a pre-amplifier circuit or a high-frequency oscillator, this device offers the flexibility and efficiency needed to achieve optimal results. Additionally, its compact form factor makes it ideal for applications that require compact and efficient solutions, such as driver ICs

Key Features

1) Suitable for Power Driver.
2) Complementary NPN Types : 2SCR582D3.
3) Low VCE(sat)
VCE(sat)=-400mV(Max.).(IC/IB=-4A/-200mA)

Specifications

Transistor Type	2 NPN (Dual)	Current - Collector (Ic) (Max)	300mA
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	820 @ 4ma, 2V
Power - Max	300mW	Frequency - Transition	35MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IMX25