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See Technical Specifications

IMX9T110 +BOM

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, SMT6, SC-74, 6 PIN

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

IMX9T110
Datasheet:

IMX9T110 Datasheet (PDF)
Transistor Type:

2 NPN (Dual)
Current - Collector (Ic) (Max):

500mA
Voltage - Collector Emitter Breakdown (Max):

20V
Vce Saturation (Max) @ Ib, Ic:

400mV @ 20mA, 500mA
EDA/CAD Models:

Request Free CAD Models for IMX9T110

IMX9T110 General Description

Featuring a dual configuration, the IMX9T110 transistor is an NPN-NPN type with a Collector Emitter Voltage V(br)ceo of 20V and a Transition Frequency Typ ft of 350MHz. With a Power Dissipation Pd rating of 300mW and a DC Collector Current of 500mA, this transistor delivers efficient performance. The DC Current Gain hFE is 560, and it is housed in a compact SOT-457 case style with 6 pins for easy installation. IMX9T110 is also compliant with environmental regulations, containing no SVHC, and boasts a Gain Bandwidth ft Typ of 350MHz

Key Features

1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting machine.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.

Specifications

Transistor Type	2 NPN (Dual)	Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	400mV @ 20mA, 500mA
Current - Collector Cutoff (Max)	500nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	560 @ 10mA, 3V
Power - Max	300mW	Frequency - Transition	350MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IMX9