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IPP80N08S2-07 +BOM

TO-220-3 MOSFET IPP80N08S2-07 with ROHS certification

Manufacturer:

Infineon
Mfr.Part #:

IPP80N08S2-07
Datasheet:

IPP80N08S2-07 Datasheet (PDF)
IDpuls Max:

320.0 A
RthJC Max:

0.5 K/W
Ptot Max:

300.0 W
Qualification:

Automotive
EDA/CAD Models:

Request Free CAD Models for IPP80N08S2-07

IPP80N08S2-07 General Description

In conclusion, the IPP80N08S2-07 Power Field-Effect Transistor is a high-quality semiconductor device that offers reliable operation and efficient power handling capabilities. With its N-Channel design and Silicon construction, this transistor is suitable for a wide range of electronic applications. Whether you're a hobbyist or a professional, this transistor is a valuable addition to your components inventory for enhancing performance and efficiency in your projects

Key Features

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested

Specifications

IDpuls max	320.0 A	RthJC max	0.5 K/W
Ptot max	300.0 W	Qualification	Automotive
VDS max	75.0 V	VGS(th) min	2.1 V
Polarity	N	RDS (on) max	7.4 mΩ
VGS(th) max	4.0 V	QG max	144.0 nC
ID max	80.0 A	Technology	OptiMOS™
Operating Temperature max	175.0 °C	Operating Temperature min	-55.0 °C