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IPT026N10N5ATMA1 +BOM

Trench MOSFET designed for high voltage applications

Manufacturer:

Infineon Technologies
Mfr.Part #:

IPT026N10N5ATMA1
Datasheet:

IPT026N10N5ATMA1 Datasheet (PDF)
Series:

OptiMOS™5
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IPT026N10N5ATMA1

IPT026N10N5ATMA1 General Description

The IPT026N10N5ATMA1 is a cutting-edge N-channel power MOSFET engineered by Infineon Technologies as part of the OptiMOS 5 power MOSFET series. With a focus on high efficiency and power density, this MOSFET boasts a 100V drain-source voltage, a continuous drain current of 160A, and a maximum on-state resistance of 2.6mOhm. Its TO-220 package ensures ease of mounting and effective heat dissipation, making it a reliable choice for a variety of applications

Specifications

Series	OptiMOS™5	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 202A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.6mOhm @ 150A, 10V	Vgs(th) (Max) @ Id	3.8V @ 158µA
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8800 pF @ 50 V	Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPT026