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IPW60R070CFD7 +BOM

TO-247 packaged N-channel MOSFET with 650V voltage rating and 31A current capability

IPW60R070CFD7 General Description

The IPW60R070CFD7 represents the pinnacle of power semiconductor technology, showcasing Infineon's commitment to innovation and quality. With features like reduced gate charge, improved turn-off behavior, and a significantly lower reverse recovery charge, this product stands out as a leader in its class. Its unmatched reverse recovery time makes it a highly sought-after choice for applications where speed and efficiency are critical

Key Features

  • Fully tested for reliability
  • Avalanche rated for safety
  • High frequency optimized
  • Rugged design ensured

Application

  • Transportation
  • Energy efficient
  • Home appliances

Specifications

IDpuls max 129.0 A Mounting THT
Ptot max 156.0 W Polarity N
RthJC max 0.8 K/W RthJA max 62.0 K/W
VDS max 600.0 V ID max 31.0 A
RDS (on) max 70.0 mΩ Special Features fast recovery diode
VGS(th) max 4.5 V VGS(th) min 3.5 V
Operating Temperature max 150.0 °C Operating Temperature min -55.0 °C

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