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IPW60R070P6 +BOM

The IPW60R070P6 MOSFET is engineered to offer robust performance

Key Features

  • Static drain-source on-resistance:
  • RDS(on)≤70mΩ
  • Enhancement mode:
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device
  • performance and reliable operation

Specifications

VDS max 600.0 V Ptot max 391.0 W
IDpuls max 156.0 A RthJC max 0.32 K/W
RthJA max 62.0 K/W Polarity N
Mounting THT ID max 53.5 A
RDS (on) max 70.0 mΩ Special Features price/performance
VGS(th) max 4.5 V VGS(th) min 3.5 V
Operating Temperature max 150.0 °C Operating Temperature min -55.0 °C

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty
365-Day Product Quality Guarantee

365-Day Product

Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

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In Stock: 9,506

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $6.824 $6.82
10+ $6.526 $65.26
30+ $6.032 $180.96
100+ $5.880 $588.00

The prices below are for reference only.

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Service Support

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

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