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IPW60R099P7 +BOM

MOSFETs TO-247-3 ROHS IPW60R099P7

Manufacturer:

Infineon Technologies
Mfr.Part #:

IPW60R099P7
Datasheet:

IPW60R099P7 Datasheet (PDF)
IDpuls Max:

100.0 A
Mounting:

THT
Ptot Max:

117.0 W
Polarity:

N
EDA/CAD Models:

Request Free CAD Models for IPW60R099P7

IPW60R099P7 General Description

The IPW60R099P7 power MOSFET transistor is a game-changer in the world of power electronics. Infineon Technologies has truly raised the bar with this innovative component, offering unparalleled efficiency and performance in a compact form factor. With a drain-source voltage of 650V and a continuous drain current of 12A, this transistor is ready to handle even the most demanding applications with ease. Its low on-state resistance minimizes power losses, while the TO-247 package ensures easy installation and optimal thermal management. Whether you're designing high-performance servers or cutting-edge telecom systems, the IPW60R099P7 is the perfect choice for your power supply needs. Trust in its reliability and robustness for a long-lasting solution you can depend on

Key Features

Suitable for hard and soft switching (PFC and LLC) due to an outstanding
commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness> 2kV(HBM) for all products
Better RDS(on)/package products compared to competition enabled by a
low RDS(on)A (below 1Ohmmm²)
Large portfolio with granular RDS(on) selection qualified for avariety of
industrial and consumer grade applications according to JEDEC
(J-STD20 and JESD22)

Specifications

IDpuls max	100.0 A	Mounting	THT
Ptot max	117.0 W	Polarity	N
RthJA max	62.0 K/W	RthJC max	1.07 K/W
VDS max	600.0 V	ID max	34.0 A
RDS (on) max	99.0 mΩ	Special Features	price/performance
VGS(th) max	4.0 V	VGS(th) min	3.0 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C