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See Technical Specifications

IPW60R125C6 +BOM

High Power Switching Device

Manufacturer:

INFINEON TECHNOLOGIES AG
Mfr.Part #:

IPW60R125C6
Datasheet:

IPW60R125C6 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IPW60R125C6

IPW60R125C6 General Description

Invest in the IPW60R125C6 for your power management needs and benefit from its advanced features and reliable performance. With a reputation for excellence in the semiconductor industry, this transistor offers a high level of functionality and precision. The green plastic package not only enhances the aesthetics of your applications but also provides a durable housing for the sensitive components within. Choose the IPW60R125C6 for efficiency and reliability in your projects

Key Features

Extremely low losses due to very low FOM RdsonQg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC qualified, Pb-free plating, Halogen free

Specifications

Source Content uid	IPW60R125C6	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	636 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	30 A
Drain-source On Resistance-Max	0.125 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	219 W
Pulsed Drain Current-Max (IDM)	89 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON