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IPW65R310CFD +BOM

Infineon IPW65R310CFD MOSFET Transistor

IPW65R310CFD General Description

N-Channel 650 V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO247-3-1

Key Features

  • Ultra-fast body diode
  • Very high commutation ruggedness
  • Extremely low losses due to very low FOM RdsonQg and Eoss
  • Easy to use/drive
  • Qualified for industrial grade applications according to JEDEC
  • (J-STD20 and JESD22)
  • Pb-free plating, Halogen free mold compound

Specifications

Series CoolMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id 4.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V Power Dissipation (Max) 104.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number IPW65R

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Qty. Unit Price Ext. Price
1+ $1.410 $1.41
200+ $0.546 $109.20
500+ $0.527 $263.50
1000+ $0.518 $518.00

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