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See Technical Specifications

JAN2N2222AUB +BOM

Microchip JAN2N2222AUBP/TR

Manufacturer:

Microchip Technology
Mfr.Part #:

JAN2N2222AUB
Datasheet:

JAN2N2222AUB Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

800 mA
Voltage - Collector Emitter Breakdown (Max):

50 V
Vce Saturation (Max) @ Ib, Ic:

1V @ 50mA, 500mA
EDA/CAD Models:

Request Free CAD Models for JAN2N2222AUB

JAN2N2222AUB General Description

With its high-reliability design and improved performance specifications, the JAN2N2222AUB offers engineers a dependable solution for applications where performance and reliability are critical. Its adherence to the Joint Army-Navy (JAN) specification for military-grade components further underscores its suitability for use in harsh and demanding environments. The transistor's low noise figure and high current gain make it well-equipped for low-level signal amplification tasks, while its maximum collector current, power dissipation, and voltage rating provide flexibility for a range of applications

Specifications

Transistor Type	NPN	Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	500 mW	Operating Temperature	-65°C ~ 200°C (TJ)
Grade	Military	Qualification	MIL-PRF-19500/255
Mounting Type	Surface Mount	Base Product Number	2N2222