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JANSR2N7389 +BOM

Radiation resistant TO-39 power MOSFET

  • Manufacturer:

    Microsemi Corporation

  • Mfr.Part #:

    JANSR2N7389

  • Datasheet:

    JANSR2N7389 Datasheet (PDF) pdf-icon

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain To Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    6.5A (Tc)

JANSR2N7389 General Description

Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPLFeaturesPotential Applications

Key Features

  • Single Event Effect (SEE) Hardened
  • Low RDS(on)
  • Low Total Gate Charge
  • Proton Tolerant
  • Simple Drive Requirements
  • Ease of Paralleling
  • Hermetically Sealed
  • Ceramic Package
  • Light Weight

Specifications

FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V Rds On (Max) @ Id, Vgs 350mOhm @ 6.5A, 12V
Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 45 nC @ 12 V
Vgs (Max) ±20V Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C Grade Military
Qualification MIL-PRF-19500/630 Mounting Type Through Hole

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