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JANTX2N5664 +BOM

Transistor NPN Bipolar Junction, TO-66 Package

Manufacturer:

Microchip
Mfr.Part #:

JANTX2N5664
Datasheet:

JANTX2N5664 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

200 V
EDA/CAD Models:

Request Free CAD Models for JANTX2N5664

JANTX2N5664 General Description

The JANTX2N5664 transistor is a robust solution for high-power, high-voltage applications. Its exceptional performance and reliability make it an ideal choice for switching and amplifier designs. With its low saturation voltage and fast switching speeds, this transistor can efficiently handle substantial power loads while maintaining stability even in harsh environments

Key Features

The JANTX2N5664 transistor provides stable and efficient performance
Its low input capacitance reduces switching losses
This device is suitable for applications requiring high-speed switching
It features a compact design with minimal space requirements

Application

High-reliability military applications
Ruggedness for industrial use
Amplification and switching circuits

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	200 V	Collector- Base Voltage VCBO	250 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	400 mV
Maximum DC Collector Current	5 A	Pd - Power Dissipation	2.5 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si
Unit Weight	0.536517 oz