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See Technical Specifications

MJE13009 +BOM

400V 12A NPN TO-220AB-3 Bipolar Transistors - BJT ROHS

Manufacturer:

Onsemi
Mfr.Part #:

MJE13009
Datasheet:

MJE13009 Datasheet (PDF)
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

400 V
Collector- Base Voltage VCBO:

700 V
EDA/CAD Models:

Request Free CAD Models for MJE13009

MJE13009 General Description

The MJE13009 sets the standard for high-voltage, high-speed power switching inductive circuits by delivering unmatched performance and reliability. Ideal for applications where rapid fall time is crucial, this transistor is a valuable asset in the design and implementation of efficient and effective electronic systems. From switchmode power supplies to motor controls, the MJE13009 offers the versatility and performance needed to tackle a wide range of demanding tasks

Key Features

V_cc 10 V and 15 V
I_p 0.5 A to 2.5 A
Pulse Width Modulation (PWM) Support
Silicon Carbide (SiC) Power Devices
Rise/Fall Time t_r/t 20 ns and 40 ns
Operating Temperature Range -55°C to 150°C

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	400 V
Collector- Base Voltage VCBO	700 V	Emitter- Base Voltage VEBO	9 V
Maximum DC Collector Current	12 A	Pd - Power Dissipation	110 W
Gain Bandwidth Product fT	4 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	DC Collector/Base Gain hfe Min	8 at 5 A, 5 V
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si