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See Technical Specifications

MRF1517NT1 +BOM

RF Power Transistor, 0.136 to 0.52 GHz, 8 W, Typ Gain in dB is 14 @ 520 MHz, 7.5 V, LDMOS

Manufacturer:

NXP
Mfr.Part #:

MRF1517NT1
Datasheet:

MRF1517NT1 Datasheet (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

4 A
Vds - Drain-Source Breakdown Voltage:

25 V

MRF1517NT1 General Description

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4A; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.7V; Package/Case:Case 466 ;RoHS Compliant: Yes

Key Features

Characterized with Series Equivalent Large-Signal Impedance Parameters

Excellent Thermal Stability

Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request

N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

Available in Tape and Reel.

T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

Specifications

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	4 A
Vds - Drain-Source Breakdown Voltage	25 V	Operating Frequency	520 MHz
Gain	14 dB	Output Power	8 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT	Channel Mode	Enhancement
Configuration	Single	Height	1.83 mm
Length	6.73 mm	Moisture Sensitive	Yes
Pd - Power Dissipation	62.5 W	Product Type	RF MOSFET Transistors
Series	MRF1517NT1	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	LDMOS FET
Type	RF Power MOSFET	Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1.7 V	Width	5.97 mm
Part # Aliases	935310293515	Unit Weight	0.009877 oz