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High-power N-channel RF MOSFET suitable for radio frequency use
NI-1230SManufacturer:
Mfr.Part #:
MRFE6VP8600HSR5
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
140 V
Operating Frequency:
470 MHz to 860 MHz
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RF Mosfet 50 V 1.4 A 860MHz 19.3dB 125W NI-1230S
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Vds - Drain-Source Breakdown Voltage | 140 V |
Operating Frequency | 470 MHz to 860 MHz | Gain | 18.8 dB |
Output Power | 600 W | Maximum Operating Temperature | + 150 C |
Mounting Style | SMD/SMT | Configuration | Dual |
Forward Transconductance - Min | 15.6 S | Pd - Power Dissipation | 1.52 kW |
Product Type | RF MOSFET Transistors | Series | MRFE6VP8600H |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Transistor Type | LDMOS FET | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 10 V | Vgs th - Gate-Source Threshold Voltage | 2.07 V |
Part # Aliases | 935310858178 | Unit Weight | 0.467870 oz |
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