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High-power LDMOS FET transistor designed for efficient power conversion and reliability
TO-272-6Manufacturer:
Mfr.Part #:
MRF1550FNT1
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
12 A
Vds - Drain-Source Breakdown Voltage:
40 V
EDA/CAD Models:
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RF Mosfet 12.5 V 500 mA 175MHz 14.5dB 50W TO-272-6
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 12 A |
Vds - Drain-Source Breakdown Voltage | 40 V | Operating Frequency | 175 MHz |
Gain | 14.5 dB | Output Power | 50 W |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Mounting Style | SMD/SMT | Channel Mode | Enhancement |
Configuration | Single | Height | 2.69 mm |
Length | 23.72 mm | Moisture Sensitive | Yes |
Pd - Power Dissipation | 165 W | Product Type | RF MOSFET Transistors |
Series | MRF1550N | Factory Pack Quantity | 500 |
Subcategory | MOSFETs | Transistor Type | LDMOS FET |
Type | RF Power MOSFET | Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Width | 6.45 mm |
Part # Aliases | 935313626528 | Unit Weight | 0.045124 oz |
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