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MRFG35010 +BOM

Advanced S-band RF amplifier module for high-frequency electronics applications

  • Manufacturer:

    NXP

  • Mfr.Part #:

    MRFG35010

  • Datasheet:

    MRFG35010 Datasheet (PDF) pdf-icon

  • Transistor Type:

    pHEMT

  • Technology:

    GaAs

  • Operating Frequency:

    3.55 GHz

  • Gain:

    10 dB

MRFG35010 General Description

RF Mosfet 12 V 130 mA 3.55GHz 10dB 9W NI-360HF

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Specifications

Product Category RF JFET Transistors Transistor Type pHEMT
Technology GaAs Operating Frequency 3.55 GHz
Gain 10 dB Vds - Drain-Source Breakdown Voltage 15 V
Vgs - Gate-Source Breakdown Voltage - 5 V Id - Continuous Drain Current 2.9 A
Output Power 10 W Minimum Operating Temperature - 20 C
Maximum Operating Temperature + 90 C Pd - Power Dissipation 28.3 W
Mounting Style Screw Mount Configuration Single
Height 4.47 mm Length 20.45 mm
P1dB - Compression Point 10 W Product RF JFET
Product Type RF JFET Transistors Subcategory Transistors
Type GaAs pHEMT Width 5.97 mm
Unit Weight 0.032480 oz Frequency 3.55GHz
Voltage - Test 12 V Current - Test 130 mA
Power - Output 9W Voltage - Rated 15 V
Mounting Type Chassis Mount Base Product Number MRFG35

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