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MRFE6S9160HSR3 +BOM

RF MOSFET Transistors HV6E 900MHZ 160W NI780HS

  • Manufacturer:

    NXP

  • Mfr.Part #:

    MRFE6S9160HSR3

  • Datasheet:

    MRFE6S9160HSR3 Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    N-Channel

  • Technology:

    Si

  • Vds - Drain-Source Breakdown Voltage:

    66 V

  • Minimum Operating Temperature:

    - 65 C

MRFE6S9160HSR3 General Description

RF Mosfet 28 V 1.2 A 880MHz 21dB 35W NI-780S

NXP Inventory

Key Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
NXP Original Stock
NXP Inventory

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Vds - Drain-Source Breakdown Voltage 66 V
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT Channel Mode Enhancement
Configuration Single Height 4.32 mm
Length 20.7 mm Product Type RF MOSFET Transistors
Series MRFE6S9160H Factory Pack Quantity 250
Subcategory MOSFETs Type RF Power MOSFET
Vgs - Gate-Source Voltage - 500 mV, 12 V Width 9.91 mm
Part # Aliases 935319257128 Unit Weight 0.113960 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $421.918 $421.92
250+ $168.348 $42,087.00
500+ $162.723 $81,361.50
1000+ $159.943 $159,943.00

The prices below are for reference only.

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