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Power amplifier module for NI- system
NI-200SManufacturer:
Mfr.Part #:
MRF281SR1
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
65 V
Operating Frequency:
1 GHz to 2.5 GHz
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RF Mosfet 26 V 25 mA 1.93GHz 12.5dB 4W NI-200S
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Vds - Drain-Source Breakdown Voltage | 65 V |
Operating Frequency | 1 GHz to 2.5 GHz | Gain | 11 dB |
Output Power | 4 W | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
Channel Mode | Enhancement | Configuration | Single |
Height | 2.95 mm | Length | 5.16 mm |
Pd - Power Dissipation | 20 W | Product Type | RF MOSFET Transistors |
Subcategory | MOSFETs | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Width | 4.14 mm |
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