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Transistor designed for frequencies up to 1400MHz
NI-780H-2LManufacturer:
Mfr.Part #:
MRF6V14300HR3
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
100 V
Minimum Operating Temperature:
- 65 C
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The MRF6V14300HR3 is a top-of-the-line RF transistor, specifically engineered to meet the demands of high frequency applications. With its impressive frequency range of 136-941 MHz and a staggering peak output power of 300 Watts, this transistor is the ideal choice for military communications, radar systems, and broadcast transmitters. Its push-pull configuration ensures excellent linearity and efficiency, while the high gain of 20 dB and typical power gain of 12 dB further solidify its performance. Not to mention, the transistor boasts a collector efficiency of 60% and a minimum gain flatness of ±0.5 dB across the entire frequency range. Housed in a hermetic metal/ceramic package, the MRF6V14300HR3 offers enhanced reliability and ruggedness, making it suitable for operation in extreme environmental conditions. From high temperatures to harsh operating conditions, this transistor is built to withstand it all, making it a smart investment for any high frequency application
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Vds - Drain-Source Breakdown Voltage | 100 V |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement | Configuration | Single |
Height | 4.32 mm | Length | 34.16 mm |
Product Type | RF MOSFET Transistors | Series | MRF6V14300H |
Factory Pack Quantity | 250 | Subcategory | MOSFETs |
Type | RF Power MOSFET | Vgs - Gate-Source Voltage | - 6 V, 10 V |
Width | 9.91 mm | Unit Weight | 0.227150 oz |
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