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Advanced radio-frequency component for wireless communicatio
NI-1230Manufacturer:
Mfr.Part #:
MRF6VP41KHR6
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
110 V
Minimum Operating Temperature:
- 65 C
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RF Mosfet 50 V 150 mA 450MHz 20dB 1000W NI-1230
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Vds - Drain-Source Breakdown Voltage | 110 V |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Mounting Style | SMD/SMT | Channel Mode | Enhancement |
Configuration | Dual Common Source | Height | 5.08 mm |
Length | 41.28 mm | Product Type | RF MOSFET Transistors |
Factory Pack Quantity | 150 | Subcategory | MOSFETs |
Type | RF Power MOSFET | Vgs - Gate-Source Voltage | - 6 V, 10 V |
Width | 10.29 mm | Unit Weight | 0.464036 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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